发明名称 END STATION FOR ION IMPLANTING APPARATUS
摘要 PURPOSE:To generate flows of clean gas on the surfaces of wafers by fitting a ring-shaped nozzle for blowing gas so that it confronts the wafer fixing surface of a disk and by arranging plural gas blowing holes facing the wafer fixing positions all over the periphery of the nozzle. CONSTITUTION:Plural wafers 7 are fixed on the circumferential part of a disk 5, and a ring-shaped nozzle 8 having a smaller outside diameter than the inside diameter of the circumferential part is fitted to a cover 2 so that the nozzle 8 confronts the wafer fixing surface of the disk 5. Plural gas blowing holes 8a facing the wafer fixing positions are arranged all over the periphery of the nozzle 8. Clean gas for ventilation is fed to the nozzle 8 through a vent valve 10 and a filter 11.
申请公布号 JPS61113765(A) 申请公布日期 1986.05.31
申请号 JP19840237026 申请日期 1984.11.09
申请人 NISSIN ELECTRIC CO LTD 发明人 NOGAMI TSUKASA
分类号 C23C14/00;C23C14/48;C23C14/56;H01J37/317;H01J37/32;(IPC1-7):C23C14/48 主分类号 C23C14/00
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