| 摘要 |
PURPOSE:To obtain an econsmical planar type semiconductor device having high breakdown strength, by introducing platinum at least into the vicinity of a boundary surface between on N-type silicon semiconductor base body surface and a silicon dioxide film. CONSTITUTION:Platinum is diffused from an N-type layer 4 side or an SiO2 5 surface side, and introduced into the vicinity of a boundary surface between the SiO2 5 and a silicon base body 2. As a result, electric charges of the boundary surface change from positive to negative. Thereby, the breakdown strength can be increased up to about 90% of its theoretical value, which can be applicable to semiconductor products of high breakdown strength such as high breakdown strength diode, high breakdown strength transistor, high breakdown strength MOSFET and high breakdown strength thyristor. When the substrate is an SiO2 film, the same effect can be obtained by arranging thereon a PSG film, an Si3N4 film, etc. having effects of external ion protection and gettering of ion in a film. |
