| 摘要 |
PURPOSE:To realize the epitaxial growth satisfactorily and to easily handle a substrate, for epitaxial growth, containing a protenctive film by a method wherein, after the surface of the substrate for epitaxial growth has been cleaned, the protective film is formed on the surface and the protective film is removed inside an epitaxial growth chamber so as to execute an epitaxial growth process. CONSTITUTION:The clean surface of a substrate for epitaxial growth is oxidized in advance and a protective film is then formed; the substrate is placed in an epitaxial growth chamber; the inside of the chamber is transformed into a reducing atmosphere; the protective film on the surface of the substrate is removed so as to expose the clean surface; after that, an epitaxial growth process is executed. For example, in order to remove a naturally oxidized layer on a substrate of Cd1-xZnxTe, the assembly is washed organically, and is etched by using a bromine-method solution. In succession, bromine is washed without exposing assembly to the air; its surface is oxidized by sulfuric acid or nitric acid, and is washed by water; the protective film is formed. The substrate is placed inside the epitaxial growth chamber; the chamber is evacuated to produce a vacuum; after that, a gas of hydrogen is introduced; the substrate is heated; the oxidation-preventive film is removed; the air is discharged. After that, the substrate is immersed in a molten solution of Hg1-xCdxTe so as to execute an epitaxial growth process.
|
