| 摘要 |
Disclosed herein is a light detection device. The light detection device includes a base layer, an electrostatic discharge (ESD) prevention layer disposed on the base layer and including an undoped nitride-based semiconductor, a light absorption layer disposed on the ESD prevention layer, a Schottky junction layer disposed on the light absorption layer, and a first electrode and a second electrode electrically connected to the Schottky junction layer and the base layer, respectively, wherein the ESD prevention layer has a lower average n-type dopant concentration than the base layer. |
