| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory which can perform verifying a normal program. SOLUTION: A first switching circuit 130 is connected to an output end of a word line voltage generating circuit 140, and supplies test voltage from the out side to a word line voltage output end 2 during a test mode. A second switching circuit 150 is connected between this first switching circuit 130 and the word line voltage output end 2. When a voltage level of the word line voltage output end 2 is higher than power source voltage, this second switching circuit 150 cuts off a leakage current path to the first switching circuit 130 at the word line voltage output end 2.</p> |
