| 摘要 |
A method of producing a semiconductor device includes bonding a semiconductor chip to a die pad of a lead frame by means of a silicone resin, to bonding a copper wire and an aluminum electrode of the semiconductor chip in such a manner that intermetallic compound mainly consisting of CuAl2 is formed in the bonding region. This method suppresses the deterioration of the copper-aluminum alloy layer and these semiconductor devices have a high reliability at a high temperature, as well as uniform quality in the production. |
