FABRICATION METHOD OF CAPACITOR

摘要

A fabrication method of capacitor is provided to improve capacitance of capacitor by forming a storage electrode along to the surface of bit line. The method comprises the steps of: sequentially forming a first insulator(20) and a flattening layer(8) on a substrate(1) having a transistor; forming a conductive layer(30) on the exposed active region(5) by selective etching the first insulator(20) and the flattening layer(8); forming a second insulator(11) and exposing a portion of another active region(5') by etching the first insulator(20); and forming a storage electrode(12) on the resultant structure. The storage electrode(12) is formed at both sidewalls of bit line, thereby increasing the effective surface area of the storage electrode.