FORMATION OF FINE PATTERN

摘要

PURPOSE:To prevent the deformation and swelling of a pattern and to enhance the resolution by applying a polymer contg. allyl groups to a substrate to form a resist film and rinsing the film with an ethylene glycol monoalkyl ether after exposure and development. CONSTITUTION:A negative type resist made of polymer such as polydiallyl o- phthalate contg. allyl groups in each repeating unit is applied to a substrate and prebaked to form a resist film. The film is then exposed through a prescribed pattern by irradiation, and after developing the resulting resist pattern the film is rinsed by dipping in an ethylene glycol monoalkyl ether such as ethylene glycol monomethyl ether and postbaked. Thus, the resolution of the pattern can be enhanced to about 1-0.5mum.