| 摘要 |
PURPOSE:To enable avoiding the disturbance of improvement of degree of integration due to the extended part of a groove with side etching by etching all the surface of a substrate after finishing anisotropic etching using a mask. CONSTITUTION:A polycrystalline Si layer 2 is formed on the surface of a semiconductor substrate 1 and an Si oxide film 3 is formed on the surface of the layer 2. Then, an aperture 4 is formed in the film 3. Thus, reactive ion etching is carried out on the layer 2 and on the surface of the substrate 1 using the film 3 as a mask. As a result, a groove 5 is formed and an extended part 6 is formed by side etching at the top of the side wall of the groove 5. Later, etching treatment is carried out on all the surface of the substrate 1. This etching removes the layer 2 completely. In this way, by etching the depth of the extended part 6 of the groove 5, the groove 5 which has no extended part 6 is formed. This enables to obtain the groove 5 which has no extended part 6 simply and with good reproducibility and the disturbance of improvement of degree of integration can be avoided. |
