| 摘要 |
<p>PURPOSE:To enable formation of an accurate pattern within an allowable error even if a warp amount of each substrate is not constant by correcting a pattern position on a mask, considering an allowable limit value for warp of a substrate. CONSTITUTION:When a warp equivalent to an allowable maximum value is generated in a substrate 10, an interval between rear edges T2, E2 is made equal to a margin Y. As for a warp of an allowable maximum value or less, an interval between rear edges T2, E2 is necessarily made larger than a margin Y. Meanwhile, the smaller a warp of the substrate 10 is, the narrower an interval between front edges T1, E1 is. Therefore, when a warp equivalent to an estimated minimum value is generated in the substrate 10, an interval between front edges T1, E1 is made coincide with a margin X and it is possible to effectively prevent a front edge E1 of an electrode 5a from protruding over a front edge T1 an n-emitter region 14a to a warp of an estimated minimum value or less.</p> |
