发明名称 半導体装置
摘要 A semiconductor device includes a transistor, a light-emitting element, a first wiring, a driver circuit having a function of controlling the potential of the first wiring, a second wiring, a first switch, a second switch, a third switch, a fourth switch, a first capacitor, and a second capacitor. One of a source and a drain of the transistor is connected to the light-emitting element. With this structure, voltage applied between the source and the gate of the transistor can be corrected in anticipation of variations in threshold voltage, so that the current supplied to the light-emitting element can be corrected.
申请公布号 JP6050054(B2) 申请公布日期 2016.12.21
申请号 JP20120187364 申请日期 2012.08.28
申请人 株式会社半導体エネルギー研究所 发明人 木村 肇
分类号 G09G3/3233;G09G3/20;G09G3/30;H01L51/50 主分类号 G09G3/3233
代理机构 代理人
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