| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device includes a first circuit layer, a copper pillar disposed adjacent to the first circuit layer, a second circuit layer and a solder layer. The second circuit layer includes an electrical contact and a surface finish layer disposed on the electrical contact, wherein a material of the surface finish layer is a combination of at least two of nickel, gold, and palladium. The solder layer is disposed between the copper pillar and the surface finish layer. The solder layer includes a first intermetallic compound (IMC) and a second IMC, wherein the first IMC includes a combination of two or more of copper, nickel and tin, and the second IMC includes a combination of gold and tin, a combination of palladium and tin, or both. |
| 申请公布号 |
US2016358875(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201615239745 |
申请日期 |
2016.08.17 |
| 申请人 |
Advanced Semiconductor Engineering, Inc. |
发明人 |
HSIAO Yu-Hsiang;LEE Chiu-Wen;YANG Ping-Feng;LIN Kwang-Lung |
| 分类号 |
H01L23/00;H01L25/00;C22C9/02;B23K35/26;B23K1/00;C22C13/00;H01L25/065;B23K35/30 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first circuit layer; a copper pillar disposed adjacent to the first circuit layer; a second circuit layer comprising an electrical contact and a surface finish layer disposed on the electrical contact, wherein a material of the surface finish layer is a combination of at least two of nickel, gold, and palladium; and a solder layer disposed between the copper pillar and the surface finish layer, the solder layer comprising a first intermetallic compound (IMC) and a second IMC, wherein the first IMC comprises a combination of two or more of copper, nickel and tin, and the second IMC includes a combination of gold and tin, a combination of palladium and tin, or both. |
| 地址 |
KAOHSIUNG TW |
