MEMORY WRITE DRIVER, METHOD AND SYSTEM

摘要

Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a non-volatile memory device may be placed in any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. For example, a write operation may apply a programming signal across terminals of non-volatile memory device having a particular current and a particular voltage for placing the non-volatile memory device in a particular memory state.

主权项

1. A method of performing a write operation, the method comprising:
receiving a plurality of voltage signals corresponding to a plurality of predetermined memory states of a non-volatile memory device; selecting a first received voltage signal from between or among the plurality of received voltage signals based, at least in part, on a particular memory state of the plurality of predetermined memory states, wherein the first received voltage signal comprises a first voltage and a first current, and a second of the plurality of received voltage signals comprises a second voltage and a second current; and applying across terminals of the non-volatile memory device a programming signal based, at least in part, on the selected voltage signal to place the memory device in the particular memory state.