| 发明名称 |
ESD DEVICE COMPATIBLE WITH BULK BIAS CAPABILITY |
| 摘要 |
A device having an electrostatic discharge structure includes a bulk substrate having a first dopant conductivity, first wells formed adjacent to a surface of the bulk substrate, including a second dopant conductivity, and second wells formed adjacent to the surface of the bulk substrate within the first wells, including the first dopant conductivity. A supply bus is formed in one of the first wells outside the second well. A ground bus has a first portion formed in another first well outside the second well, and a second portion is formed inside the second well such that a charge input to the second wells is dissipated without accumulating in the bulk substrate. |
| 申请公布号 |
US2017098646(A1) |
申请公布日期 |
2017.04.06 |
| 申请号 |
US201514873859 |
申请日期 |
2015.10.02 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Cheng Kangguo;Doris Bruce B.;Hook Terence B.;Khakifirooz Ali;Kerber Pranita;Pranatharthiharan Balasubramanian;Shahidi Ghavam G. |
| 分类号 |
H01L27/02 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device having an electrostatic discharge structure, comprising:
a hulk substrate having a first dopant conductivity; first wells formed adjacent to a surface of the bulk substrate and including a second dopant conductivity; second wells formed adjacent to the surface of the bulk substrate within the first wells and including the first dopant conductivity; a supply bus formed in one of the first wells outside the second well; and a ground bus having a first portion formed in another first well outside the second well and a second portion formed inside the second well such that a charge input to the second wells is dissipated without accumulating in the bulk substrate. |
| 地址 |
Armonk NY US |
