Enclosure, device and process for annealing a II-IV semiconductor material

摘要

The chamber (7) has a storage zone (8) for storing an element of group II of periodic table i.e. liquid mercury, a receiving zone (9) for receiving semi-conductor material of II-VI type, and a separating partition (12) provided at the level of an intermediate zone (13). The separating partition has passage aperture (14) that is equipped with an anti-reverse gas flow unit i.e. ball type anti-return valve (15), to ensure one-way passage of the liquid mercury, in vapor phase, from the storage zone to the receiving zone. A thermal insulator (16) is provided at the level of the intermediate zone. Independent claims are also included for the following: (1) a device for annealing II-VI type semi-conductor material, comprising an annealing chamber (2) a method for annealing II-VI type semi-conductor material.