Semiconductor device structure and method for forming the same

摘要

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a dielectric layer positioned on the semiconductor substrate. The dielectric layer has a first recess. The semiconductor device structure includes a conductive structure filling the first recess. The conductive structure includes a first conductive layer and a second conductive layer. The first conductive layer is positioned over an inner wall and a bottom of the first recess. The first conductive layer has a second recess in the first recess. The second conductive layer fills the second recess. The first conductive layer and the second conductive layer include cobalt. The second conductive layer further includes at least one of sulfur, chlorine, boron, phosphorus, or nitrogen.

主权项

1. A semiconductor device structure, comprising:
a semiconductor substrate; a dielectric layer positioned above the semiconductor substrate, wherein the dielectric layer has an inner wall surrounding and defining a first recess; and a conductive structure filling the first recess, wherein the conductive structure comprises: a first conductive layer positioned over the inner wall of the dielectric layer and a bottom of the first recess, wherein the first conductive layer has an inner wall surrounding and defining a second recess at least partially in the first recess, and a top of the inner wall of the first conductive layer is substantially aligned with or above a top of the dielectric layer; and a second conductive layer filling the second recess, wherein the first conductive layer and the second conductive layer comprise cobalt, and the second conductive layer further comprises at least one of sulfur, chlorine, boron, phosphorus, or nitrogen.