发明名称 IMAGING DEVICE, MODULE, ELECTRONIC DEVICE, AND METHOD OF OPERATING THE IMAGING DEVICE
摘要 An imaging device whose dynamic range can be wide with a simple structure is provided. In a circuit configuration and an operation method of the imaging device, whether a charge detection portion provided in a pixel is saturated with electrons is determined and an operation mode is changed depending on the determination result. First imaging data is captured first, and is read out in the case where the charge detection portion is not saturated with electrons. In the case where the charge detection portion is saturated with electrons, the saturation of the charge detection portion is eliminated and second imaging data is captured and read out.
申请公布号 US2017078606(A1) 申请公布日期 2017.03.16
申请号 US201615258011 申请日期 2016.09.07
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 OHMARU Takuro
分类号 H04N5/378;H04N5/359;H04N5/369;H01L27/146 主分类号 H04N5/378
代理机构 代理人
主权项 1. An imaging device comprising: a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor; a photoelectric conversion element; and a first capacitor and a second capacitor, wherein: one of electrodes of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor, and one of a source and a drain of the second transistor, the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the third transistor, one of a source and a drain of the fourth transistor, a gate of the fifth transistor, and one of electrodes of the first capacitor, the other of the source and the drain of the fourth transistor is electrically connected to one of electrodes of the second capacitor, one of a source and a drain of the fifth transistor is electrically connected to one of a source and a drain of the sixth transistor, and each of the first transistor, the second transistor, the third transistor, and the fourth transistor includes an oxide semiconductor.
地址 Atsugi-shi JP