| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME |
| 摘要 |
Provided is a semiconductor device including a memory gate structure and a select gate structure. The memory gate structure is closely adjacent to the select gate structure. Besides, an air gap encapsulated by an insulating layer is disposed between the memory gate structure and the select gate structure. |
| 申请公布号 |
US2017077110(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201514924525 |
申请日期 |
2015.10.27 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Liu Wei-Chang;Chen Zhen;Wang Shen-De;Xiang Wang;Chiu Yi-Shan;Ta Wei |
| 分类号 |
H01L27/115;H01L21/28 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a memory gate structure; and a select gate electrode, closely adjacent to the memory gate structure, wherein an air gap encapsulated by an insulating layer is disposed between the memory gate structure and the select gate electrode, wherein the select gate electrode has a flat top surface and a side surface, and a portion of the side surface adjacent to the flat top surface is inclined. |
| 地址 |
Hsinchu TW |
