Semiconductor device and manufacturing method thereof

摘要

A method for manufacturing a semiconductor device includes forming a fin structure including a well layer, an oxide layer disposed over the well layer and a channel layer disposed over the oxide layer. An isolation insulating layer is formed so that the channel layer of the fin structure protrudes from the isolation insulating layer and a part of or an entirety of the oxide layer is embedded in the isolation insulating layer. A gate structure is formed over the fin structure. A recessed portion is formed by etching a part of the fin structure not covered by the gate structure such that the oxide layer is exposed. A recess is formed in the exposed oxide layer. An epitaxial seed layer in the recess in the oxide layer. An epitaxial layer is formed in and above the recessed portion. The epitaxial layer is in contact with the epitaxial seed layer.

主权项

1. A method for manufacturing a semiconductor device, comprising:
forming a fin structure including a well layer, an oxide layer disposed over the well layer and a channel layer disposed over the oxide layer; forming an isolation insulating layer so that the channel layer of the fin structure protrudes from the isolation insulating layer and at least a part of the oxide layer or an entirety of the oxide layer is embedded in the isolation insulating layer; forming a gate structure over a part of the fin structure and over the isolation insulating layer; forming a recessed portion by etching a part of the fin structure not covered by the gate structure to expose the oxide layer; forming a recess in the exposed oxide layer by removing a portion of the exposed oxide layer; forming a seed layer for epitaxial growth in the recess in the oxide layer; and forming an epitaxial layer in and above the recessed portion, wherein the epitaxial layer is in contact with the seed layer.