| 发明名称 |
INTERCONNECTS BASED ON SUBTRACTIVE ETCHING OF SILVER |
| 摘要 |
A method for forming at least one Ag or Ag based alloy feature in an integrated circuit, including providing a blanket layer of Ag or Ag based alloy in a multi-layer structure on a substrate. The method further includes providing a hard mask layer over the blanket layer of Ag or Ag based alloy. The method further includes performing an etch of the blanket layer of Ag or Ag based alloy, wherein a portion of the blanket layer of Ag or Ag based alloy that remains after the etch forms one or more conductive lines. The method further includes forming a liner that surrounds the one or more conductive lines. The method further includes depositing a dielectric layer on the multi-layer structure. |
| 申请公布号 |
US2017062274(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615347969 |
申请日期 |
2016.11.10 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Baker-O'Neal Brett C.;Joseph Eric A.;Miyazoe Hiroyuki |
| 分类号 |
H01L21/768;H01L21/033;H01L23/532;H01L21/027;H01L21/3213;H01L23/528 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming at least one Ag or Ag based alloy feature in an integrated circuit, the method comprising:
providing a blanket layer of Ag or Ag based alloy in a multi-layer structure on a substrate; and performing an etch of the blanket layer of Ag or Ag based alloy, wherein a portion of the blanket layer of Ag or Ag based alloy that remains after the etch forms one or more conductive lines, and wherein the etch of the blanket layer of Ag or Ag based alloy is performed using a plasma that is capable of forming a polymeric compound and/or complex on the portion of the blanket layer of Ag or Ag based alloy that remains after the etch. |
| 地址 |
Armonk NY US |
