| 发明名称 | Method for forming an inductor structure with magnetic material | ||
| 摘要 | The methods for forming an inductor structure are provided. The method includes forming an oxide layer over a substrate, and the layer includes an opening. The method includes forming a magnetic material over the oxide layer and in the opening and forming a patterned photoresist layer over the magnetic material, wherein the patterned photoresist layer overlaps the opening. The method further includes performing an etching process on the magnetic material using the patterned photoresist as a mask. | ||
| 申请公布号 | US9570536(B2) | 申请公布日期 | 2017.02.14 |
| 申请号 | US201514948000 | 申请日期 | 2015.11.20 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD | 发明人 | Tseng Yuan-Tai;Liu Ming-Chyi;Chou Chung-Yen;Tsai Chia-Shiung |
| 分类号 | H01L29/82;H01L49/02;H01L23/522;H01F17/00 | 主分类号 | H01L29/82 |
| 代理机构 | McClure, Qualey & Rodack, LLP | 代理人 | McClure, Qualey & Rodack, LLP |
| 主权项 | 1. A method for forming an inductor structure, comprising: forming an oxide layer over a substrate, wherein the oxide layer comprises an opening; forming a magnetic material over the oxide layer and in the opening; forming a patterned photoresist layer over the magnetic material, wherein the patterned photoresist layer overlaps the opening; and performing an etching process on the magnetic material using the patterned photoresist as a mask, such that the magnetic layer has more than four surfaces in a cross section view after the etching process. | ||
| 地址 | Hsinchu TW | ||