SELECTIVELY REGROWN TOP CONTACT FOR VERTICAL SEMICONDUCTOR DEVICES
摘要
Vertical semiconductor devices having selectively regrown top contacts and method of fabricating vertical semiconductor devices having selectively regrown top contacts are described. For example, a semiconductor device includes a substrate having a surface. A first source/drain region is disposed on the surface of the substrate. A vertical channel region is disposed on the first source/drain region and has a first width parallel with the surface of the substrate. A second source/drain region is disposed on the vertical channel region and has a second width parallel with and substantially greater than the first width. A gate stack is disposed on and completely surrounds a portion of the vertical channel region.
申请公布号
EP3123520(A1)
申请公布日期
2017.02.01
申请号
EP20140887440
申请日期
2014.03.28
申请人
Intel Corporation
发明人
CHU-KUNG, Benjamin;DEWEY, Gilbert;LE, Van H.;KAVALIEROS, Jack T.;RADOSAVLJEVIC, Marko;PILLARISETTY, Ravi;THEN, Han Wui;MUKHERJEE, Niloy;DASGUPTA, Sansaptak