NON-VOLATILE MEMORY WITH ADJUSTABLE CELL BIT SHAPE

摘要

Embodiments of the present disclosure generally relate to non-volatile memory and, in particular, non-volatile memory with adjustable cell bit shapes. In one embodiment, an adjustable memory cell is provided. The memory cell generally includes a gate electrode, at least one recording layer and a channel layer. The channel layer generally is capable of supporting a depletion region and is disposed between the gate electrode and the at least one recording layer. In this embodiment, upon activating the gate, the channel layer may be depleted and current initially flowing through the channel may be steered through the at least one recording layer.

主权项

1. A method for recording one or more bits in at least one memory cell having a channel layer, a recording layer and a gate, the method comprising:
channeling current from the channel layer to the recording layer to transform a portion of the recording layer from a first resistance state to a second resistance state.