| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device includes a semiconductor layer of a first conductivity type, a plurality of first regions that are spaced apart from each other along a first direction by portions of the semiconductor layer, each of the first regions including a first semiconductor region of a second conductivity type, a second region between the first regions in the first direction, the second region including a second semiconductor region of the first conductivity type and a first insulator between the second semiconductor region and the semiconductor layer, and a third region between the first region and the second region, the third region including a third semiconductor region of the first conductivity type and a second insulator. | ||
| 申请公布号 | US9536997(B1) | 申请公布日期 | 2017.01.03 |
| 申请号 | US201615056896 | 申请日期 | 2016.02.29 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Yokoyama Noboru;Sato Shinya;Sakuma Tomoyuki |
| 分类号 | H01L29/78 | 主分类号 | H01L29/78 |
| 代理机构 | Patterson & Sheridan, LLP | 代理人 | Patterson & Sheridan, LLP |
| 主权项 | 1. A semiconductor device, comprising: a semiconductor layer of a first conductivity type; a plurality of first regions that are spaced apart from each other along a first direction by portions of the semiconductor layer, each of the first regions including a first semiconductor region of a second conductivity type; a second region between the first regions in the first direction, the second region including a second semiconductor region of the first conductivity type and a first insulator between the second semiconductor region and the semiconductor layer; and a third region between the first region and the second region, the third region including a third semiconductor region of the first conductivity type and a second insulator. | ||
| 地址 | Tokyo JP | ||