| 摘要 |
Sb-Te-based alloy sintered sputtering target having a Sb content of 10 to 60 at%, a Te content of 20 to 60 at%, and remainder being one or more types of elements selected from Ag, In, and Ge and unavoidable impurities, wherein an average grain size of oxides is 0.5 µm or less. An object of this invention is to improve the texture of the Sb-Te-based alloy sintered sputtering target in order to prevent the generation of arcing during sputtering and improve the thermal stability of the sputtered film. |
