| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor module that can prevent an SiC freewheeling diode from breaking down when a surge voltage or a dynamic avalanche voltage of an Si switching element is applied to the SiC freewheeling diode.SOLUTION: The power semiconductor module includes an SiC-SBD 2 having a static avalanche voltage Vavs2 higher than a static avalanche voltage Vavs1 of an Si-IGBT 1 in a whole range of junction temperature used. According to the configuration, even when a surge voltage or a dynamic avalanche voltage Vavd of the Si-IGBT 1 is applied to the SiC-SBD 2, the static avalanche voltage Vavs2 of the SiC-SBD 2 is higher than the voltage applied to prevent the SiC-SBD 2 from breaking down in the whole range of junction temperature used. |
