| 摘要 |
The present invention relates to a method (500) for protecting a top surface (108) of a layer (104, 304) in a semiconductor structure (100, 200, 300, 400), the method (500) comprising: providing (502) a layer (104, 304) on a substrate (102), the layer (104, 304) having an initial thickness (to) and an initial composition (C 0 ), and a top surface (108), depositing (504) by means of physical vapor deposition, PVD, a sacrificial metal layer (106) on and in contact with the top surface (108), the sacrificial metal layer (106) comprising a light metal element, depositing (506) by means of physical vapor deposition a functional metal layer (110, 312) on and in contact with the sacrificial metal layer (106), whereby the sacrificial metal layer (106) is removed by sputtering during the deposition of the functional metal layer (110, 312) such that an interface (112) is formed between the top surface (108) and the functional metal layer (110, 312), the sacrificial metal layer (106) protecting the top surface (108) during the deposition of the functional metal layer (110, 312) such that, the layer (104, 304) has a final thickness (t f ) matching the initial thickness (to) and a final composition (C f ) corresponding to the initial composition (Co). |
