| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist composition that gives a resist film with high etching durability and reduced outgassing in EUV and EB lithography capable of forming an ultrafine pattern.SOLUTION: The resist composition for extreme ultraviolet ray and electron beam exposure comprises a base component (A) that shows a change in alkali solubility by an action of an acid, an acid generator (B) that generates an acid by light exposure, a nitrogen-containing organic compound (C), and an organic solvent (D). The base component (A) has a structural unit in which a fullerene skeleton is connected via an acid dissociable partial structure (X) expressed by either (X) or (X) described below to a repeating unit constituting the polymer main chain thereof. |
