| 摘要 |
The present invention relates to an oxide sputtering target, and a transparent conductive film deposited through the same. More specifically, the present invention relates to the oxide sputtering target which deposits the transparent conductive film showing low resistivity by being crystallized through low temperature thermal treatment at a temperature of 140°C or less after the film is deposited through sputtering as a sputtering target to deposit the transparent conductive film. For the same, the present invention provides the oxide sputtering target comprising: a sintered material including a material based on In, Sn, Ge, and O composition; and the transparent conductive film deposited through the same. A content of Sn atom is 2-5 atom% of a sum of contents of In atom, Sn atom, and Ge atom. A content of Ge atom is 0.3-4 atom% of the sum of the contents of the In atom, the Sn atom, and the Ge atom. |
