| 发明名称 |
POWER MODULE AND FABRICATION METHOD FOR THE SAME |
| 摘要 |
A power module includes: an insulating layer; a leadframe (metal layer) disposed on the insulating layer; a semiconductor chip disposed on the leadframe; and a mold resin formed so as to cover the semiconductor chip, at least a part of the metal layer, and at least a part of the insulating layer, wherein the insulating layer includes a relatively-soft insulating layer disposed at a side of the leadframe and a relatively-hard insulating layer disposed at an opposite side of the leadframes. Accordingly, there can be provided the power module with improved cooling capability and improved reliability, and the fabrication method for such a power module. |
| 申请公布号 |
US2016141224(A1) |
申请公布日期 |
2016.05.19 |
| 申请号 |
US201615003199 |
申请日期 |
2016.01.21 |
| 申请人 |
ROHM CO., LTD. |
发明人 |
YOSHIHARA Katsuhiko;SAITO Masao |
| 分类号 |
H01L23/42;H01L21/48;H01L21/56;H01L23/495 |
主分类号 |
H01L23/42 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power module comprising:
an insulating layer; a metal layer disposed on the insulating layer; a semiconductor chip disposed on the metal layer; and a mold resin formed so as to cover the semiconductor chip, at least a part of the metal layer, and at least a part of the insulating layer, wherein the insulating layer includes a relatively-hard insulating layer disposed at a side of the metal layer and a relatively-soft insulating layer disposed at an opposite side of the metal layer. |
| 地址 |
Kyoto-shi JP |
