Heating phase change material

摘要

A phase change memory may be formed of two vertically spaced layers of phase change material. An intervening dielectric may space the layers from one another along a substantial portion of their lateral extent. An opening may be provided in the intervening dielectric to allow the phase change layers to approach one another more closely. As a result, current density may be increased at this location, producing heating.

主权项

1. A method comprising:
spacing a pair of chalcogenide layers by first and second intervening layers, wherein said first and second intervening layers are disposed between a top surface of a first chalcogenide layer of said pair of chalcogenide layers and a bottom surface of a second chalcogenide layer of said pair of chalcogenide layers, wherein the second intervening layer is silicon nitride; and forming an opening through said first intervening layer to reduce spacing between said pair of chalcogenide layers.