RESISTIVE MEMORY DEVICE, RESISTIVE MEMORY SYSTEM AND OPERATING METHOD THEREOF

摘要

Disclosed are a resistive memory device including a dummy line, a resistive memory system and an operating method thereof. A method for operating the resistive memory device according to the technical idea of the present invention, wherein the resistive memory device includes a plurality of bit lines and one or more dummy lines, comrpsies: a step of detecting a first address coming with a first command; a step of generating prohibition voltages for biasing non-select lines; and a step of providing a first prohibition voltage selected among the prohibition voltages to the first dummy bit line according to the first address detection result. So, a leakage current generated in dummy cells connected to the dummy lines can be reduced.