| 摘要 |
PROBLEM TO BE SOLVED: To accurately form a fine resist pattern and suppress development defects by scanning a developing liq. feed nozzle along a route starting from near the center of a substrate being rotated to near the center via the entire periphery of the substrate during jetting the liq. nearly on the center of the substrate from the nozzle. SOLUTION: A wafer 1 having an exposed resist formed thereon is rotated at a predetermined high speed by a motor, a developing nozzle 6 is moved near to the center of the wafer to jet a developing liq. on the wafer and shifted at a predetermined speed to the periphery of the wafer during jetting the liq. and the rotation speed of the wafer is down to a low speed from the high speed. Then the nozzle 6 is moved near to the center with a reduced speed of the nozzle 6 to feed the developing liq. on the entire surface of the wafer and then stops from jetting and the wafer stops rotating and is rinsed with pure water to finish. Thus, it is possible to accurately form a fine resist pattern. |
