Methods for selectively removing a fin when forming FinFET devices

摘要

One illustrative method disclosed herein includes, among other things, forming a plurality of fins in a semiconducting substrate, each of which has a corresponding masking layer feature positioned thereabove, forming a masking layer that has an opening that exposes at least two fins of the plurality of fins, performing an angled etching process through the opening in the masking layer so as to remove the masking layer feature formed above one of the at least two exposed fins, and thereby define an exposed fin, while leaving the masking layer feature intact above the other of the at least two exposed fins, and performing an anisotropic etching process through the opening in the masking layer to remove the exposed fin while leaving the other of the at least two exposed fins intact.

主权项

1. A method, comprising:
forming a plurality of fins in a semiconducting substrate, each of which has a corresponding masking layer feature positioned thereabove; forming at least one patterned layer of material above said plurality of fins, wherein said at least one patterned layer of material has an opening that exposes at least two fins of said plurality of fins; performing an angled etching process through said opening in said at least one patterned layer of material so as to remove said masking layer feature formed above one of said at least two exposed fins, and thereby define an exposed fin, while leaving said masking layer feature intact above the other of said at least two exposed fins; performing an anisotropic etching process through said opening in said at least one patterned layer of material to remove said exposed fin while leaving the other of said at least two exposed fins intact; and forming a layer of insulating material in at least a portion of the space previously occupied by the removed exposed fin.