发明名称 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM
摘要 The present invention is to prevent pattern collapse on a wafer (W) in supercritical processing. A substrate processing method comprises the processes of: supplying rinse solution, IPA, first fluorine-contained organic solvent, and second fluorine-contained organic solvent to the wafer (W) in an outer chamber of a liquid processing unit (2); transporting the wafer (W) a processing container (3A) of a supercritical unit (3); and supplying fluorine-contained organic solvent for supercritical processing as high-pressure fluid in a supercritical state to the wafer (W) in the processing container (3A). Low-humidity N_2 gas is supplied into an outer chamber (21) at the time of supplying at least IPA, and the inside of the outer chamber (21) is made into a low-humidity N_2 gas atmosphere to prevent moisture absorption by the IPA.
申请公布号 KR20160048652(A) 申请公布日期 2016.05.04
申请号 KR20150142419 申请日期 2015.10.12
申请人 TOKYO ELECTRON LIMITED 发明人 OHNO HIROKI;TANOUCHI KEIJI;MITSUOKA KAZUYUKI;ORII TAKEHIKO;TOSHIMA TAKAYUKI
分类号 H01L21/02;H01L21/67;H01L21/677;H01L51/00 主分类号 H01L21/02
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