Achieving a critical dimension target based on resist characteristics

摘要

Achieving a critical dimension target for a feature based on characteristics of a resist is facilitated. Mask data is established for fabricating a lithographic mask to expose different regions of a resist to high, low, and intermediate exposure levels. The resist is configured to exhibit high solubility when exposed to the high or low exposure level, and low solubility when exposed to the intermediate exposure level. A critical dimension for a region of the resist to be exposed to the intermediate exposure level is determined, and the mask data is established to indicate opaque regions for forming on the lithographic mask. The opaque regions are arrayed to facilitate exposing the region of the resist to the intermediate exposure level, to achieve the determined critical dimension. Further, a method is provided for forming in-situ a patterned mask from a mask layer above a substrate material.

主权项

1. A method comprising:
establishing lithographic mask data for fabrication of a lithographic mask for exposing different regions of a resist to high, low, and intermediate exposure levels, the resist configured to exhibit high solubility to a developer when exposed to one or more of the high exposure level or the low exposure level, and exhibit low solubility to a developer when exposed to the intermediate exposure level, the establishing comprising:
determining a critical dimension for a region of the resist to be exposed to the intermediate exposure level; andestablishing lithographic mask data indicating a plurality of opaque regions for forming on the lithographic mask, the plurality of opaque regions being arrayed in at least one direction and configured to block, at least partially, light from passing through the lithographic mask, wherein the plurality of opaque regions being arrayed facilitates exposing the region of the resist to an intermediate exposure level to achieve the determined critical dimension for the region of the resist.