发明名称 ERROR DETECTION METHOD
摘要 Methods for detecting and correcting defects in a memory array during a memory operation are described. The memory operation may comprise a programming operation or an erase operation. In some cases, a Control Gate Short to Substrate (CGSS) defect, in which a control gate of a NAND memory has been shorted to the substrate, may have a defect signature in which a word line shows a deviation in the number of programming loop counts associated with programming data into memory cells connected to the word line. The deviation in the number of programming loop counts may be detected by comparing a baseline programming loop count (e.g., derived from programming a set of one or more word lines prior to programming the word line with the CGSS defect) with a programming loop count associated with programming the word line with the CGSS defect.
申请公布号 US2016118136(A1) 申请公布日期 2016.04.28
申请号 US201414525813 申请日期 2014.10.28
申请人 SANDISK TECHNOLOGIES INC. 发明人 Tseng Huai-Yuan;Dutta Deepanshu
分类号 G11C16/34;G11C11/56 主分类号 G11C16/34
代理机构 代理人
主权项 1. A method for operating a non-volatile storage system, comprising: programming a first set of data into a memory array, the memory array includes a first set of word lines, the programming a first set of data includes programming the first set of data into a first set of memory cells connected to the first set of word lines; determining a baseline programming loop count based on programming the first set of data into the first set of memory cells; programming a second set of data into the memory array subsequent to the programming a first set of data, the memory array includes a second set of word lines and a third set of word lines, the programming a second set of data includes programming the second set of data into a second set of memory cells connected to the second set of word lines; determining a programming loop count associated with programming the second set of data into the second set of memory cells; detecting a deviation from the baseline programming loop count based on the programming loop count; and programming the second set of data into a third set of memory cells connected to the third set of word lines in response to detecting the deviation.
地址 Plano TX US