Self-aligned contact process enabled by low temperature

摘要

Self-aligned contacts of a semiconductor device are fabricated by forming a metal gate structure on a portion of a semiconductor layer of a substrate. The metal gate structure contacts inner sidewalls of a gate spacer. A second sacrificial epitaxial layer is formed on a first sacrificial epitaxial layer. The first sacrificial epitaxial layer is adjacent to the gate spacer and is formed on source/drain regions of the semiconductor layer. The first and second sacrificial epitaxial layers are recessed. The recessing exposes at least a portion of the source/drain regions. A first dielectric layer is formed on the exposed portions of the source/drain regions, and over the gate spacer and metal gate structure. At least one cavity within the first dielectric layer is formed above at least one of the exposed portions of source/drain regions. At least one metal contact is formed within the at least one cavity.

主权项

1. A method of forming self-aligned contacts for a semiconductor device, the method comprising:
forming a metal gate structure on a portion of a semiconductor layer of a substrate and contacting inner sidewalls of a gate spacer; forming a second sacrificial epitaxial layer on a first sacrificial epitaxial layer, wherein the first sacrificial epitaxial layer is adjacent to the gate spacer and is formed on source/drain regions of the semiconductor layer; recessing the first and second sacrificial epitaxial layers, the recessing exposing at least a portion of the source/drain regions; forming a first dielectric layer on the exposed portions of the source/drain regions, and over the gate spacer and metal gate structure; forming at least one cavity within the first dielectric layer above at least a portion of one or more of the source/drain regions; and forming at least one metal contact within the at least one cavity.