| 摘要 |
Systems and methods for drying a substrate including a plurality of high aspect ratio (HAR) structures are performed after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching solution and/or wet cleaning solution, respectively, and without drying the substrate. Fluid between the plurality of HAR structures is displaced using a solvent including a bracing material. After the solvent evaporates, the bracing material precipitates out of solution and at least partially fills the plurality of HAR structures. The substrate is exposed to plasma generated using plasma gas chemicals that are hydrogen rich, by removing the bracing material, to dry the substrate including the HAR structures without damaging the plurality of HAR structures. |
