| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A method for fabricating a semiconductor device includes: implanting a first species into a substrate at a cold temperature to form a first region; and implanting a second species into the substrate at a hot temperature to form a second region that is adjacent to the first region. |
| 申请公布号 |
US2016099152(A1) |
申请公布日期 |
2016.04.07 |
| 申请号 |
US201514968012 |
申请日期 |
2015.12.14 |
| 申请人 |
SK hynix Inc. |
发明人 |
CHA Jae-Chun;JIN Seung-Woo;LEE An-Bae;JANG Il-Sik |
| 分类号 |
H01L21/265;H01L29/167;H01L29/10;H01L29/66;H01L29/08 |
主分类号 |
H01L21/265 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a semiconductor device, comprising:
performing a hot temperature implantation using a first species to form a first region having a broadened doping profile, wherein the hot temperature implantation performed at a temperature higher than a room temperature; and performing a cold temperature implantation using a second species to form a second region having a suppressed doping profile, wherein the cold temperature implantation performed at a temperature lower than the room temperature. |
| 地址 |
Gyeonggi-do KR |
