发明名称 METHOD AND APPARATUS FOR RF COMPENSATION IN PLASMA ASSISTED ATOMIC LAYER DEPOSITION
摘要 Embodiments herein relate to methods, apparatus, and systems for depositing a film on substrates. In these embodiments, substrates are processed in batches. Due to changing conditions within a reaction chamber as additional substrates in the batch are processed, various film properties may trend over the course of a batch. Disclosed herein are methods and apparatus for minimizing the trending of film properties over the course of a batch. More specifically, film property trending is minimized by changing the amount of RF power used to process substrates over the course of the batch. Such methods are sometimes referred to as RF compensation methods.
申请公布号 KR20160038783(A) 申请公布日期 2016.04.07
申请号 KR20150135292 申请日期 2015.09.24
申请人 LAM RESEARCH CORPORATION 发明人 QIAN JUN;PASQUALE FRANK L.;LAVOIE ADRIEN;BALDASSERONI CHLOE;KANG HU;SWAMINATHAN SHANKAR;KUMAR PURUSHOTTAM;FRANZEN PAUL;LE TRUNG T.;NGUYEN TUAN;PETRAGLIA JENNIFER L.;SMITH DAVID CHARLES;VARADARAJAN SESHASAYEE
分类号 H01J37/32 主分类号 H01J37/32
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