SEMICONDUCTOR DIE

摘要

A semiconductor die includes a substrate and an insulation layer over the substrate. The semiconductor die also includes a plurality of P-metal gate areas within the insulation layer and over a first device region. The semiconductor device further includes a plurality of N-metal gate areas within the insulation layer and over the first device region. The semiconductor device additionally includes a plurality of dummy P-metal gate areas within the insulation layer and over a second device region. The semiconductor device also includes a plurality of dummy N-metal gate areas within the insulation layer and over the second device region. At least one N-metal gate area individually differs in size compared to at least one P-metal gate area. At least one dummy P-metal gate area individually differs in size compared to at least one dummy N-metal gate area.

主权项

1. A semiconductor die comprising:
a substrate; an insulation layer over the substrate; a plurality of P-metal gate areas within the insulation layer and over a first device region of the substrate; a plurality of N-metal gate areas within the insulation layer and over the first device region; a plurality of dummy P-metal gate areas within the insulation layer and over a second device region of the substrate different from the first device region; and a plurality of dummy N-metal gate areas within the insulation layer and over the second device region, wherein
at least one N-metal gate area of the plurality of N-metal gate areas over the first device region individually differs in size compared to at least one P-metal gate area of the plurality of P-metal gate areas over the first device region, andat least one dummy P-metal gate area of the plurality of dummy P-metal gate areas over the second device region individually differs in size compared to at least one dummy N-metal gate area of the plurality of dummy N-metal gate areas over the second device region.