| 发明名称 |
MEMORY MODULE HAVING DIFFERENT TYPES OF MEMORY MOUNTED TOGETHER THEREON, AND INFORMATION PROCESSING DEVICE HAVING MEMORY MODULE MOUNTED THEREIN |
| 摘要 |
A memory module having different types of memory mounted together on a double-sided substrate has a first edge and opposite second edge and includes a plurality of memory controllers, a plurality of flash memories, and a plurality of second memories having a higher signal transmission rate than the flash memories. A socket terminal for connecting the double-sided substrate to a motherboard is formed on the front surface and the back surface of the double-sided substrate on the first edge side; the memory controllers are disposed on the second edge side; the second memories are disposed on the second edge side at positions opposite the positions at which the memory controllers are disposed; and the flash memories are disposed on at least the back surface thereof at positions that are closer to the first edge than are the positions at which the memory controllers and the second memories are disposed. |
| 申请公布号 |
US2016092351(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201314764838 |
申请日期 |
2013.06.20 |
| 申请人 |
HITACHI, LTD. |
发明人 |
UEMATSU Yutaka;MURAOKA Satoshi;KAKITA Hiroshi;IDEI Akio;FUKUMURA Yusuke;WATANABE Satoru;ONO Takayuki;SUMIKURA Taishi;FUKUDA Yuichi;MIYAGAWA Takashi;NAITO Michinori;OSAKA Hideki;SHIBATA Masabumi;UENO Hitoshi;NAKAJIMA Kazunori;KONDO Yoshihiro |
| 分类号 |
G06F12/02;G11C16/04;G11C7/10 |
主分类号 |
G06F12/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory module having different types of memories mounted together thereon, the memory module comprising:
a double-sided substrate having a first edge and a second edge opposite the first edge; a plurality of memory controllers; a plurality of flash memories; and a plurality of second memories having a higher signal transmission rate than the rate of the flash memories; wherein a socket terminal for connecting the double-sided substrate to a motherboard is formed on the first edge side of the double-sided substrate but on the front and the back surface of the double-sided substrate; wherein the memory controllers are disposed on the second edge side of the double-sided substrate; wherein the second memories are disposed on the second edge side of the double-sided substrate but at corresponding positions opposite the positions at which the memory controllers are disposed; and wherein the flash memories are disposed on at least the back surface of the double-sided substrate but at positions that are closer to the first edge rather than the memory controllers and the second memories. |
| 地址 |
Tokyo JP |
