Diffusion barrier coated substrates and methods of making the same

摘要

Semiconductor devices on a diffusion barrier coated metal substrates, and methods of making the same are disclosed. The semiconductor devices include a metal substrate, a diffusion barrier layer on the metal substrate, an insulator layer on the diffusion barrier layer, and a semiconductor layer on the insulator layer. The method includes forming a diffusion barrier layer on the metal substrate, forming an insulator layer on the diffusion barrier layer; and forming a semiconductor layer on the insulator layer. Such diffusion barrier coated substrates prevent diffusion of metal atoms from the metal substrate into a semiconductor device formed thereon.

主权项

1. A device, comprising:
a) a metal substrate containing iron, chromium, nickel, molybdenum, niobium, cobalt and/or titanium; b) one or more diffusion barrier layers on said metal substrate, wherein at least one of said diffusion barrier layers comprises a compound of the formula TixNy, where the ratio of x to y is from about 3:4 to about 3:2, or TiaAlbNc, where the ratio of (a+b) to c is from about 3:4 to about 3:2, and said one or more diffusion barrier layers have a total thickness of from 300 Å to less than 1000 Å; c) one or more insulator layers on said one or more diffusion barrier layers, said insulator layer(s) electrically isolating said one or more diffusion barrier layers from electrical devices and electrical device features subsequently formed on said one or more insulator layers; and d) a semiconductor layer on said one or more insulator layers, wherein the semiconductor layer comprises silicon.