Light emitting and lasing semiconductor methods and devices

摘要

A method for producing light emission from a semiconductor structure, including the following steps: providing a semiconductor structure that includes a semiconductor base region of a first conductivity type and having a relatively long minority carrier diffusion length characteristic, between a semiconductor emitter region of a second conductivity type opposite to that of the first conductivity type, and a semiconductor drain region of the second conductivity type; providing, between the base region and the drain region, a semiconductor auxiliary region of the first conductivity type and having a relatively short minority carrier diffusion length characteristic; providing, within the base region, a region exhibiting quantum size effects; providing an emitter electrode coupled with the emitter region; providing a base/drain electrode coupled with the base region and the drain region; and applying signals with respect to the emitter and base/drain electrodes to obtain light emission from the semiconductor structure.

主权项

1. A method for producing light emission from a semiconductor structure, comprising the steps of:
providing a semiconductor structure that includes a semiconductor base region of a first conductivity type and having a relatively long minority carrier diffusion length characteristic, between a semiconductor emitter region of a second conductivity type opposite to that of said first conductivity type, and a semiconductor drain region of said second conductivity type; providing, between said base region and said drain region, a semiconductor auxiliary region of said first conductivity type and having a relatively short minority carrier diffusion length characteristic; providing an undoped semiconductor region between said auxiliary region and said drain region; providing, within said base region, a region exhibiting quantum size effects; providing an emitter electrode coupled with said emitter region; providing a base/drain electrode coupled with said base region, said auxiliary region, and said drain region; and applying signals with respect to said emitter and base/drain electrodes to obtain light emission from said semiconductor structure.