Capacitor structure applied to integrated circuit

摘要

A capacitor structure applied to an integrated circuit (IC) is provided. The capacitor structure includes a metal-oxide semiconductor (MOS) capacitor and two metal structures with different structures. The MOS capacitor has a first terminal and a second terminal. The two metal capacitors are formed above the MOS capacitor and respectively coupled between the first terminal and the second terminal. Subject to the confined chip area, the capacitance of the above-mentioned capacitor structure can still reach the design value, and the above-mentioned capacitor structure is further characterized by a large amount of current flow.

主权项

1. A capacitor structure applied to an integrated circuit, the capacitor structure comprising:
a metal-oxide semiconductor capacitor having a first terminal and a second terminal; and two metal capacitors comprising a first metal capacitor and a second metal capacitor, wherein the first metal capacitor does not comprise a finger-like structure, the second metal capacitor comprises the finger-like structure, and the two metal capacitors are formed above the metal-oxide semiconductor capacitor and respectively coupled between the first terminal and the second terminal, wherein a first level of metal electrode of the first metal capacitor and a first level of metal electrode of the second metal capacitor are located in a same first metal layer, wherein a second level of metal electrode of the first metal capacitor and a second level of metal electrode of the second metal capacitor are located in a same second metal layer, wherein the second metal layer is located above the first metal layer.