Semiconductor device with a field ring edge termination structure and a separation trench arranged between different field rings

摘要

A semiconductor device has a semiconductor body with bottom and top sides and a lateral surface. An active semiconductor region is formed in the semiconductor body and an edge region surrounds the active semiconductor region. A first semiconductor zone of a first conduction type is formed in the edge region. An edge termination structure having at least N field limiting structures is formed in the edge region. Each of the field limiting structures has a field ring and a separation trench formed in the semiconductor body, where N is at least 1. Each of the field rings has a second conduction type, forms a pn-junction with the first semiconductor zone and surrounds the active semiconductor region. For each of the field limiting structures, the separation trench of that field limiting structure is arranged between the field ring of that field limiting structure and the active semiconductor region.

主权项

1. A semiconductor device, comprising:
a semiconductor body comprising a bottom side, a top side opposite the bottom side, and a lateral surface; an active semiconductor region formed in the semiconductor body; an edge region surrounding the active semiconductor region; a first semiconductor zone formed in the edge region, the first semiconductor zone having a first conduction type; and an edge termination structure formed in the edge region and comprising at least N field limiting structures, each of the field limiting structures comprising a field ring, and a separation trench formed in the semiconductor body, wherein:
N≧2;each of the field rings has a second conduction type complementary to the first conduction type and forms a pn-junction with the first semiconductor zone;each of the field rings surrounds the active semiconductor region; andfor each of the field limiting structures, the separation trench of that field limiting structure is arranged between the field ring of that field limiting structure and the active semiconductor region, wherein one of the separation trenches is arranged between a first one of the field rings and a second one of the field rings, wherein there is no further field ring arranged between the first one of the field rings and the second one of the field rings; the first field ring surrounds the one of the separation trenches and the one of the separation trenches surrounds the second field ring; and a distance between the one of the separation trenches and the first field ring is less than a distance between the one of the separation trenches and the second field ring.