| 发明名称 |
CIRCUIT AND METHOD FOR ADJUSTING SELECT GATE VOLTAGE OF NON-VOLATILE MEMORY |
| 摘要 |
A circuit for adjusting a select gate voltage of a non-volatile memory is provided. The circuit includes a well, a select gate, an adjustment unit, and a switch. There is a capacitive coupling between the well and the select gate. The adjustment unit generates a driving voltage for the select gate. The switch is coupled in series with the adjustment unit between the select gate and the well. |
| 申请公布号 |
US2016064086(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201414471769 |
申请日期 |
2014.08.28 |
| 申请人 |
MACRONIX International Co., Ltd. |
发明人 |
Hung Shuo-Nan;Shen Shin-Jang;Chen Wei-Jen |
| 分类号 |
G11C16/14 |
主分类号 |
G11C16/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A circuit for adjusting a select gate voltage of a non-volatile memory, comprising:
a well; a select gate, wherein there is a capacitive coupling between the well and the select gate; an adjustment unit generating a driving voltage for the select gate; and a switch coupled in series with the adjustment unit between the select gate and the well. |
| 地址 |
Hsinchu TW |
