FinFETs with Vertical Fins and Methods for Forming the Same

摘要

In a method for forming a device, a (110) silicon substrate is etched to form first trenches in the (110) silicon substrate, wherein remaining portions of the (110) silicon substrate between the first trenches form silicon strips. The sidewalls of the silicon strips have (111) surface orientations. The first trenches are filled with a dielectric material to from Shallow Trench Isolation (STI) regions. The silicon strips are removed to form second trenches between the STI regions. An epitaxy is performed to grow semiconductor strips in the second trenches. Top portions of the STI regions are recessed, and the top portions of the semiconductor strips between removed top portions of the STI regions form semiconductor fins.

主权项

1. A method comprising:
etching a top portion of a silicon substrate to form a first fin, wherein the top portion of the silicon substrate comprises a (110) silicon substrate; forming Shallow Trench Isolation (STI) regions contacting opposite sidewalls of the first fin; etching the first fin to form a recess in the STI regions, wherein a top surface of a bottom portion of the silicon substrate is exposed, and the bottom portion of the silicon substrate comprises a (100) silicon substrate; and epitaxially growing a second fin in the recess, wherein the second fin comprises a semiconductor material.