Radio-frequency switch having gate node voltage compensation network

摘要

Radio-frequency (RF) switch circuits are disclosed having transistor gate voltage compensation to provide improved switching performance. RF switch circuits include a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate. A compensation network including a coupling circuit couples the gates of each pair of neighboring FETs.

主权项

1. A radio-frequency (RF) switch comprising:
a first field-effect transistor (FET) having a first gate node; a second FET connected in series with the first FET, the second FET having a second gate node; a third FET connected in series with the second FET, the third FET having a third gate node; a first capacitor that blocks DC current flow between the first gate node and the second gate node and passes AC current between the first gate node and the second gate node; a second capacitor directly connected at a first end to the second gate node and directly connected at a second end to the third gate node; and a first resistor directly connected at a first end to the first gate node and directly connected at a second end to a gate bias voltage node coupled to the first, second and third gate nodes, the first resistor being in parallel with the first capacitor.